IRFU1010Z Infineon Technologies
Артикул
IRFU1010Z
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 42A IPAK, N-Channel 55 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFU1010Z.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
140W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2840 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
*IRFU1010Z
Mounting Type
Through Hole
Standard Package
75
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
IPAK (TO-251AA)
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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