IRFU4105ZPBF Infineon Technologies
Артикул
IRFU4105ZPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 30A IPAK, N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFU4105ZPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
48W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
2156-IRFU4105ZPBF,*IRFU4105ZPBF,SP001552434,INFINFIRFU4105ZPBF
Mounting Type
Through Hole
Standard Package
3,000
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
IPAK (TO-251AA)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут