IRFU5505 Infineon Technologies
Артикул
IRFU5505
Бренд
Infineon Technologies
Описание
MOSFET P-CH 55V 18A IPAK, P-Channel 55 V 18A (Tc) 57W (Tc) Through Hole IPAK (TO-251AA)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFU5505.jpg
Supplier Device Package
IPAK (TO-251AA)
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
-
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001552454,*IRFU5505
Standard Package
75
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
57W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут