IRG4PH50S-EPBF Infineon Technologies
Артикул
IRG4PH50S-EPBF
Бренд
Infineon Technologies
Описание
IGBT 1200V 57A TO247AD, IGBT - 1200 V 57 A 200 W Through Hole TO-247AD
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IRG4PH50S-EPBF.jpg
Test Condition
960V, 33A, 5Ohm, 15V
Power - Max
200 W
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
57 A
IGBT Type
-
Current - Collector Pulsed (Icm)
114 A
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 33A
Switching Energy
1.8mJ (on), 19.6mJ (off)
Gate Charge
167 nC
Other Names
IRG4PH50SEPBF,2156-IRG4PH50S-EPBF,SP001545684,INFINFIRG4PH50S-EPBF
Mounting Type
Through Hole
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
25
Td (on/off) @ 25°C
32ns/845ns
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