IRGIB15B60KD1P Infineon Technologies
Артикул
IRGIB15B60KD1P
Бренд
Infineon Technologies
Описание
IGBT 600V 19A 52W TO220FP, IGBT NPT 600 V 19 A 52 W Through Hole TO-220AB Full-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IRGIB15B60KD1P.jpg
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
19 A
Current - Collector Pulsed (Icm)
38 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Power - Max
52 W
Switching Energy
127µJ (on), 334µJ (off)
Input Type
Standard
Gate Charge
56 nC
Td (on/off) @ 25°C
30ns/173ns
Test Condition
400V, 15A, 22Ohm, 15V
REACH Status
REACH Unaffected
Supplier Device Package
TO-220AB Full-Pak
Package / Case
TO-220-3 Full Pack
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRGIB15B60KD1P,63-7002PBF-ND,63-7002PBF,SP001537730,INFINFIRGIB15B60KD1P
Standard Package
2,000
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
RoHS Status
ROHS3 Compliant
Reverse Recovery Time (trr)
67 ns
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