IRL40S212 Infineon Technologies
Артикул
IRL40S212
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 195A D2PAK, N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL40S212.jpg
Supplier Device Package
PG-TO263-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8320 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
StrongIRFET™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRL40S212CT,IRL40S212DKR-ND,IRL40S212CT-ND,IRL40S212TR-ND,IRL40S212TRINACTIVE,SP001568454,IRL40S212DKRINACTIVE,IRL40S212TR
Standard Package
800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
231W (Tc)
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