IRLML6302TRPBF Infineon Technologies
Артикул
IRLML6302TRPBF
Бренд
Infineon Technologies
Описание
MOSFET P-CH 20V 780MA SOT23, P-Channel 20 V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23
Цена
79 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLML6302TRPBF.jpg
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
Micro3™/SOT-23
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.45 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
97 pF @ 15 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
780mA (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
IRLML6302GTRPBF,SP001574060,IRLML6302PBFDKR,*IRLML6302TRPBF,IRLML6302GTRPBFCT,IRLML6302GTRPBFTR,IRLML6302GTRPBFTR-ND,IRLML6302GTRPBF-ND,IRLML6302PBFTR,SP001550492,IRLML6302GTRPBFCT-ND,IRLML6302PBFCT
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRLML6302
Power Dissipation (Max)
540mW (Ta)
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