IRLU2905Z Infineon Technologies
Артикул
IRLU2905Z
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 42A I-PAK, N-Channel 55 V 42A (Tc) 110W (Tc) Through Hole I-PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLU2905Z.jpg
Supplier Device Package
I-PAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 25 V
FET Feature
-
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRLU2905Z
Standard Package
75
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
110W (Tc)
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