SPB10N10LG Infineon Technologies
Артикул
SPB10N10LG
Бренд
Infineon Technologies
Описание
N-CHANNEL POWER MOSFET, N-Channel 100 V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
Цена
67 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPB10N10LG.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id
2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
444 pF @ 25 V
FET Feature
-
Supplier Device Package
PG-TO263-3-2
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
Series
SIPMOS®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPB10N10LG,IFEINFSPB10N10LG
Standard Package
1,000
Power Dissipation (Max)
50W (Tc)
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