SPD30P06P Infineon Technologies
Артикул
SPD30P06P
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 30A TO252-3, P-Channel 60 V 30A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Цена
107 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD30P06P.jpg
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
75mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1535 pF @ 25 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000077529,SPD30P06PXTINTR-ND,SPD30P06PINTR,SPD30P06PXTINCT-ND,SPD30P06PINDKR-NDR,SPD30P06PT,SPD30P06PXTINTR,SPD30P06PINTR-NDR,SPD30P06PINCT,SPD30P06PNTMA1,SP000012842,SPD30P06PXTINCT,SPD30P06PINCT-NDR,SPD30P06PINDKR
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
125W (Tc)
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