SPI80N03S2L-06 Infineon Technologies
Артикул
SPI80N03S2L-06
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 80A TO262-3, N-Channel 30 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPI80N03S2L-06.jpg
Supplier Device Package
PG-TO262-3-1
REACH Status
REACH Affected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2530 pF @ 25 V
FET Feature
-
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000016265,SPI80N03S2L06X
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
150W (Tc)
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