SPP21N10 Infineon Technologies
Артикул
SPP21N10
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 21A TO220-3, N-Channel 100 V 21A (Tc) 90W (Tc) Through Hole PG-TO220-3-1
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP21N10.jpg
Supplier Device Package
PG-TO220-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs
38.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
865 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Series
SIPMOS®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPP21N10XTIN,INFINFSPP21N10,SP000013842,SPP21N10X,SPP21N10XTIN-ND,SPP21N10IN,SPP21N10IN-NDR,2156-SPP21N10-IT
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
90W (Tc)
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