SPU08P06P Infineon Technologies
Артикул
SPU08P06P
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 8.83A TO251-3, P-Channel 60 V 8.83A (Ta) 42W (Tc) Through Hole PG-TO251-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPU08P06P.jpg
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
PG-TO251-3
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Rds On (Max) @ Id, Vgs
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Operating Temperature
-
Series
SIPMOS®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
8.83A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000012086,SPU08P06PIN,SPU08P06PIN-NDR,SPU08P06PX,SPU08P06PXTIN,SPU08P06PXTIN-ND
Standard Package
1,500
Mounting Type
Through Hole
Power Dissipation (Max)
42W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут