HP8S36TB Rohm Semiconductor
Артикул
HP8S36TB
Бренд
Rohm Semiconductor
Описание
30V NCH+NCH MIDDLE POWER MOSFET,, Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 80A 29W Surface Mount 8-HSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/HP8S36TB.jpg
Standard Package
2,500
Mounting Type
Surface Mount
Power - Max
29W
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
27A, 80A
Rds On (Max) @ Id, Vgs
2.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
6100pF @ 15V
Other Names
HP8S36TBDKR,HP8S36TBTR,HP8S36TBCT
HTSUS
8541.29.0095
ECCN
EAR99
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
8-HSOP
Base Product Number
HP8S36
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
FET Feature
-
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