TP65H070LDG Transphorm
Артикул
TP65H070LDG
Бренд
Transphorm
Описание
GANFET N-CH 650V 25A 3PQFN, N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
Цена
2 236 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TP65H070LDG.jpg
Technology
GaNFET (Cascode Gallium Nitride FET)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
California Prop 65
Warning Information
Supplier Device Package
3-PQFN (8x8)
Series
TP65H070L
Package
Tube
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
TP65H070
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
60
Package / Case
3-PowerDFN
Power Dissipation (Max)
96W (Tc)
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