SI4435FDY-T1-GE3 VISHAY
Артикул
SI4435FDY-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 30V 12.6A 8SOIC, P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
Цена
88 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4435FDY-T1-GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Standard Package
2,500
Other Names
SI4435FDY-T1-GE3DKR,SI4435FDY-T1-GE3TR,SI4435FDY-T1-GE3CT,SI4435FDY-T1-GE3-ND
HTSUS
8541.29.0095
Series
TrenchFET® Gen III
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4435
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
4.8W (Tc)
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