SIDR680ADP-T1-RE3 VISHAY
Артикул
SIDR680ADP-T1-RE3
Бренд
VISHAY
Описание
MOSFET N-CH 80V 30.7A/137A PPAK, N-Channel 80 V 30.7A (Ta), 137A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Цена
450 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
TrenchFET® Gen IV
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs
2.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss)
80 V
Gate Charge (Qg) (Max) @ Vgs
83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4415 pF @ 40 V
FET Type
N-Channel
Supplier Device Package
PowerPAK® SO-8DC
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
SIDR680
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIDR680ADP-T1-RE3DKR,742-SIDR680ADP-T1-RE3TR,742-SIDR680ADP-T1-RE3CT
Standard Package
3,000
Package / Case
PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
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