AUIRFS6535 Infineon Technologies
Артикул
AUIRFS6535
Бренд
Infineon Technologies
Описание
MOSFET N-CH 300V 19A D2PAK, N-Channel 300 V 19A (Tc) 210W (Tc) Surface Mount PG-TO263-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/AUIRFS6535.jpg
Other Names
SP001516136
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
210W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Rds On (Max) @ Id, Vgs
185mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2340 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
AUIRFS6535
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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