AUIRFS8407 Infineon Technologies
Артикул
AUIRFS8407
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 195A D2PAK, N-Channel 40 V 195A (Tc) 230W (Tc) Surface Mount PG-TO263-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/AUIRFS8407.jpg
Other Names
IFEINFAUIRFS8407,IRAUIRFS8407-ND,2156-AUIRFS8407,SP001520236,IRAUIRFS8407
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
230W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7330 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
AUIRFS8407
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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