BSB014N04LX3GXUMA1 Infineon Technologies
Артикул
BSB014N04LX3GXUMA1
Бренд
Infineon Technologies
Описание
BSB014N04 - TRENCH <= 40V, N-Channel 40 V 36A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
OptiMOS™
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
196 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
16900 pF @ 20 V
FET Feature
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-BSB014N04LX3GXUMA1-448
Standard Package
1
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-WDSON
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
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