BSC027N10NS5ATMA1 Infineon Technologies
Артикул
BSC027N10NS5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 23A/100A TSON, N-Channel 100 V 23A (Ta), 100A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3
Цена
842 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC027N10NS5ATMA1.jpg
Other Names
BSC027N10NS5ATMA1-ND,BSC027N10NS5ATMA1CT,BSC027N10NS5ATMA1TR,SP001795088,BSC027N10NS5ATMA1DKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 214W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8200 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
BSC027
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSON-8-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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