BSC110N06NS3GATMA1 Infineon Technologies
Артикул
BSC110N06NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 50A TDSON-8, N-Channel 60 V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
Цена
181 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC110N06NS3GATMA1.jpg
Other Names
BSC110N06NS3 GTR,BSC110N06NS3 GDKR,BSC110N06NS3G,BSC110N06NS3GATMA1TR,SP000453668,BSC110N06NS3 GCT-ND,BSC110N06NS3 G-ND,BSC110N06NS3 GCT,BSC110N06NS3 GTR-ND,BSC110N06NS3 G,BSC110N06NS3 GDKR-ND,BSC110N06NS3GATMA1DKR-NDTR-ND,BSC110N06NS3GATMA1DKR,BSC110N06N
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
BSC110
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-5
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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