FF200R12KT4HOSA1 Infineon Technologies
Артикул
FF200R12KT4HOSA1
Бренд
Infineon Technologies
Описание
IGBT MOD 1200V 320A 1100W, IGBT Module Trench Field Stop Half Bridge 1200 V 320 A 1100 W Chassis Mount Module
Цена
22 615 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Modules, Транзисторы - IGBT - Модули
Image
files/FF200R12KT4HOSA1.jpg
Base Product Number
FF200R12
Other Names
2156-FF200R12KT4HOSA1,SP000370618,INFINFFF200R12KT4HOSA1,FF200R12KT4-ND,FF200R12KT4
Configuration
Half Bridge
Power - Max
1100 W
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
320 A
Input
Standard
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
NTC Thermistor
No
Current - Collector Cutoff (Max)
5 mA
Mounting Type
Chassis Mount
Standard Package
10
Series
C
Package
Bulk
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Input Capacitance (Cies) @ Vce
14 nF @ 25 V
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