IPAN60R125PFD7SXKSA1 Infineon Technologies
Артикул
IPAN60R125PFD7SXKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 25A TO220, N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
Цена
549 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPAN60R125PFD7SXKSA1.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1503 pF @ 400 V
FET Feature
-
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Series
CoolMOS™PFD7
Package
Tube
Part Status
Active
Other Names
448-IPAN60R125PFD7SXKSA1,SP003235924
Standard Package
50
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Base Product Number
IPAN60
RoHS Status
ROHS3 Compliant
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
32W (Tc)
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