IPD122N10N3GATMA1 Infineon Technologies
Артикул
IPD122N10N3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 59A TO252-3, N-Channel 100 V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3
Цена
279 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD122N10N3GATMA1.jpg
Other Names
IPD122N10N3GATMA1DKR,IPD122N10N3GATMA1TR,SP001127828,IPD122N10N3GATMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
94W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Rds On (Max) @ Id, Vgs
12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
IPD122
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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