IPD180N10N3GBTMA1 Infineon Technologies
Артикул
IPD180N10N3GBTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 43A TO252-3, N-Channel 100 V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD180N10N3GBTMA1.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
71W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Rds On (Max) @ Id, Vgs
18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Other Names
IPD180N10N3 GTR-ND,SP000482438,IPD180N10N3 G,IPD180N10N3GBTMA1CT,IPD180N10N3 GDKR-ND,IPD180N10N3G,IPD180N10N3 GCT,IPD180N10N3 GCT-ND,IPD180N10N3GBTMA1TR,IPD180N10N3 GDKR,IPD180N10N3GXT,IPD180N10N3 G-ND,IPD180N10N3GBTMA1DKR
Mounting Type
Surface Mount
Standard Package
2,500
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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