IPD30N10S3L34ATMA1 Infineon Technologies
Артикул
IPD30N10S3L34ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 30A TO252-3, N-Channel 100 V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
Цена
217 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD30N10S3L34ATMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-11
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1976 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD30N10S3L-34TR,IPD30N10S3L-34DKR,IPD30N10S3L34ATMA1DKR,IPD30N10S3L-34CT-ND,IPD30N10S3L34,SP000261248,IPD30N10S3L-34DKR-ND,IPD30N10S3L34ATMA1CT,IPD30N10S3L-34,IPD30N10S3L-34TR-ND,IPD30N10S3L-34CT,IPD30N10S3L-34-ND,IPD30N10S3L34ATMA1TR
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPD30N10
Power Dissipation (Max)
57W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут