IPW65R041CFD7XKSA1 Infineon Technologies
Артикул
IPW65R041CFD7XKSA1
Бренд
Infineon Technologies
Описание
650V FET COOLMOS TO247, N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3
Цена
2 117 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPW65R041CFD7XKSA1.jpg
Power Dissipation (Max)
227W (Tc)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V
FET Feature
-
Supplier Device Package
PG-TO247-3
Base Product Number
IPW65R041
Standard Package
30
Series
CoolMOS™ CFD7
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPW65R041CFD7XKSA1,SP005413359
Drive Voltage (Max Rds On, Min Rds On)
10V
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