IPL60R650P6SATMA1 Infineon Technologies
Артикул
IPL60R650P6SATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 6.7A 8THINPAK, N-Channel 600 V 6.7A (Tc) 56.8W (Tc) Surface Mount 8-ThinPak (5x6)
Цена
317 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPL60R650P6SATMA1.jpg
Other Names
IPL60R650P6SATMA1DKR,ROCINFIPL60R650P6SATMA1,2156-IPL60R650P6SATMA1,SP001163080,IPL60R650P6SATMA1CT,IPL60R650P6SATMA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
56.8W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Rds On (Max) @ Id, Vgs
650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
557 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPL60R650
Mounting Type
Surface Mount
Series
CoolMOS™ P6
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
8-ThinPak (5x6)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут