IPU60R1K0CEAKMA2 Infineon Technologies
Артикул
IPU60R1K0CEAKMA2
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 4.3A TO251-3, N-Channel 600 V 4.3A (Tc) 61W (Tc) Through Hole PG-TO251-3
Цена
66 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPU60R1K0CEAKMA2.jpg
Other Names
INFINFIPU60R1K0CEAKMA2,SP001396378,2156-IPU60R1K0CEAKMA2
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
61W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPU60R1
Mounting Type
Through Hole
Series
CoolMOS™ CE
Package
Tube
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
PG-TO251-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,500
Vgs (Max)
±20V
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