IPW90R120C3FKSA1 Infineon Technologies
Артикул
IPW90R120C3FKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 900V 36A TO247-3 COO, N-Channel 900 V 36A (Tc) 417W (Tc) Through Hole PG-TO247-3-1
Цена
1 340 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPW90R120C3FKSA1.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO247-3-1
Series
CoolMOS™
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-IPW90R120C3FKSA1-448
Standard Package
1
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Power Dissipation (Max)
417W (Tc)
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