IRF5803D2TR Infineon Technologies
Артикул
IRF5803D2TR
Бренд
Infineon Technologies
Описание
MOSFET P-CH 40V 3.4A 8SO, P-Channel 40 V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF5803D2TR.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Rds On (Max) @ Id, Vgs
112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Standard Package
4,000
Series
FETKY™
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут