IRF5810TRPBF Infineon Technologies
Артикул
IRF5810TRPBF
Бренд
Infineon Technologies
Описание
MOSFET 2P-CH 20V 2.9A 6-TSOP, Mosfet Array 2 P-Channel (Dual) 20V 2.9A 960mW Surface Mount 6-TSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRF5810TRPBF.jpg
Base Product Number
IRF5810
Other Names
IRF5810TRPBFTR,SP001574802,IRF5810TRPBF-ND,IRF5810TRPBFCT,IRF5810TRPBFDKR
Power - Max
960mW
FET Type
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A
Rds On (Max) @ Id, Vgs
90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 16V
Mounting Type
Surface Mount
Standard Package
3,000
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Moisture Sensitivity Level (MSL)
2 (1 Year)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
FET Feature
Logic Level Gate
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