IRF60B217 Infineon Technologies
Артикул
IRF60B217
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 60A TO220AB, N-Channel 60 V 60A (Tc) 83W (Tc) Through Hole TO-220AB
Цена
289 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF60B217.jpg
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2230 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
StrongIRFET™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001571396,2156-IRF60B217-448
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRF60B217
Power Dissipation (Max)
83W (Tc)
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