IRF6725MTRPBF Infineon Technologies
Артикул
IRF6725MTRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 28A DIRECTFET, N-Channel 30 V 28A (Ta), 170A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6725MTRPBF.jpg
Supplier Device Package
DIRECTFET™ MX
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 15 V
FET Feature
-
Package / Case
DirectFET™ Isometric MX
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 170A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001526964,IRF6725MTRPBFDKR,IRF6725MTRPBF-ND,IRF6725MTRPBFCT,IRF6725MTRPBFTR
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
2.8W (Ta), 100W (Tc)
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