IRF6892STRPBF Infineon Technologies
Артикул
IRF6892STRPBF
Бренд
Infineon Technologies
Описание
MOSFET N CH 25V 28A S3, N-Channel 25 V 28A (Ta), 125A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ S3C
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2510 pF @ 13 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
SP001532336
Mounting Type
Surface Mount
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
DirectFET™ Isometric S3C
Supplier Device Package
DIRECTFET™ S3C
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,800
Vgs (Max)
±16V
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