IRF7353D1PBF Infineon Technologies
Артикул
IRF7353D1PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 6.5A 8SO, N-Channel 30 V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7353D1PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Rds On (Max) @ Id, Vgs
32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
SP001559814
Mounting Type
Surface Mount
Series
FETKY™
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
95
Vgs (Max)
±20V
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