SPB20N60C3ATMA1 Infineon Technologies
Артикул
SPB20N60C3ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 20.7A TO263-3, N-Channel 650 V 20.7A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
Цена
1 078 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPB20N60C3ATMA1.jpg
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
20.7A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPB20N60C3INTR-ND,SPB20N60C3ATMA1DKR,SPB20N60C3INCT-ND,SPB20N60C3INDKR-ND,SPB20N60C3ATMA1CT,SPB20N60C3INCT,SPB20N60C3XT-ND,SP000013520,SPB20N60C3,SPB20N60C3XT,SPB20N60C3INTR,SPB20N60C3INDKR,SPB20N60C3ATMA1TR
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SPB20N60
Power Dissipation (Max)
208W (Tc)
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