IRF9333TRPBF Infineon Technologies
Артикул
IRF9333TRPBF
Бренд
Infineon Technologies
Описание
MOSFET P-CH 30V 9.2A 8SO, P-Channel 30 V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Цена
136 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF9333TRPBF.jpg
Other Names
IRF9333TRPBFCT,IRF9333TRPBFDKR,IRF9333TRPBFTR,SP001560120
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.2A (Ta)
Rds On (Max) @ Id, Vgs
19.4mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id
2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRF9333
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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