IRFB61N15DPBF Infineon Technologies
Артикул
IRFB61N15DPBF
Бренд
Infineon Technologies
Описание
IRFB61N15 - 12V-300V N-CHANNEL P, N-Channel 150 V 60A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB
Цена
189 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB61N15DPBF.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3470 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Series
HEXFET®
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-IRFB61N15DPBF-448
Standard Package
1
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Power Dissipation (Max)
2.4W (Ta), 330W (Tc)
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