IRFH5020TRPBF Infineon Technologies
Артикул
IRFH5020TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 5.1A 8PQFN, N-Channel 200 V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6)
Цена
408 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH5020TRPBF.jpg
Package / Case
8-PowerTDFN
Supplier Device Package
8-PQFN (5x6)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRFH5020TRPBFDKR,IRFH5020TRPBFTR,IRFH5020TRPBFCT,IRFH5020TRPBF-ND,SP001575478
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRFH5020
Power Dissipation (Max)
3.6W (Ta), 8.3W (Tc)
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