IRFHM4226TRPBF Infineon Technologies
Артикул
IRFHM4226TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N CH 25V 28A PQFN, N-Channel 25 V 28A (Ta) 2.7W (Ta), 39W (Tc) Surface Mount
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHM4226TRPBF.jpg
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 13 V
FET Feature
-
Package / Case
8-TQFN Exposed Pad
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
28A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRFHM4226TRPBFCT,IRFHM4226TRPBFTR,SP001556568,IRFHM4226TRPBFDKR
Standard Package
4,000
Mounting Type
Surface Mount
Power Dissipation (Max)
2.7W (Ta), 39W (Tc)
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