IRFHM830DTRPBF Infineon Technologies
Артикул
IRFHM830DTRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 20A/40A PQFN, N-Channel 30 V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount PQFN (3x3)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHM830DTRPBF.jpg
Supplier Device Package
PQFN (3x3)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1797 pF @ 25 V
FET Feature
-
Package / Case
8-VQFN Exposed Pad
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 40A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001554840
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
2.8W (Ta), 37W (Tc)
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