IRFHS8342TRPBF Infineon Technologies
Артикул
IRFHS8342TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 8.8A/19A TSDSON, N-Channel 30 V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6
Цена
88 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHS8342TRPBF.jpg
Other Names
SP001556608,IRFHS8342TRPBFTR,IRFHS8342TRPBFDKR,IRFHS8342TRPBFCT,IRFHS8342TRPBF-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.1W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRFHS8342
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
6-PowerVDFN
Supplier Device Package
PG-TSDSON-6
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут