IRFL4105 Infineon Technologies
Артикул
IRFL4105
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 3.7A SOT223, N-Channel 55 V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFL4105.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Rds On (Max) @ Id, Vgs
45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
*IRFL4105,SP001554898
Mounting Type
Surface Mount
Standard Package
80
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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