IRFU5410 Infineon Technologies
Артикул
IRFU5410
Бренд
Infineon Technologies
Описание
MOSFET P-CH 100V 13A IPAK, P-Channel 100 V 13A (Tc) 66W (Tc) Through Hole IPAK (TO-251AA)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFU5410.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
66W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Rds On (Max) @ Id, Vgs
205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
*IRFU5410,SP001576322
Mounting Type
Through Hole
Standard Package
75
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
IPAK (TO-251AA)
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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