IRG7PH35UD1-EP Infineon Technologies
Артикул
IRG7PH35UD1-EP
Бренд
Infineon Technologies
Описание
IGBT 1200V 50A 179W TO247, IGBT Trench 1200 V 50 A 179 W Through Hole TO-247AD
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IRG7PH35UD1-EP.jpg
REACH Status
REACH Unaffected
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
150 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 20A
Power - Max
179 W
Switching Energy
620µJ (off)
Input Type
Standard
Gate Charge
130 nC
Td (on/off) @ 25°C
-/160ns
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001541578
Standard Package
25
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRG7PH35
Test Condition
600V, 20A, 10Ohm, 15V
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