IRL2203NSTRLPBF Infineon Technologies
Артикул
IRL2203NSTRLPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 116A D2PAK, N-Channel 30 V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL2203NSTRLPBF.jpg
Supplier Device Package
D2PAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRL2203NSTRLPBFTR,IRL2203NSTRLPBF-ND,IFEINFIRL2203NSTRLPBF,SP001568324,IRL2203NSTRLPBFDKR,2156-IRL2203NSTRLPBF,IRL2203NSTRLPBFCT
Standard Package
800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
3.8W (Ta), 180W (Tc)
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