IRL2910STRLPBF Infineon Technologies
Артикул
IRL2910STRLPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 55A D2PAK, N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
Цена
608 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL2910STRLPBF.jpg
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRL2910STRLPBFCT,IRL2910STRLPBF-ND,IRL2910STRLPBFDKR,SP001571800,IRL2910STRLPBFTR
Standard Package
800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRL2910
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
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