IRLB3813PBF Infineon Technologies
Артикул
IRLB3813PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 260A TO220AB, N-Channel 30 V 260A (Tc) 230W (Tc) Through Hole TO-220AB
Цена
320 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLB3813PBF.jpg
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.95mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8420 pF @ 15 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
260A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001558110,64-0084PBF,64-0084PBF-ND,2156-IRLB3813PBF,IFEINFIRLB3813PBF
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRLB3813
Power Dissipation (Max)
230W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут